Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors
نویسندگان
چکیده
منابع مشابه
Ion bipolar junction transistors.
Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective memb...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2018
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.2018.2829110